Bishop, R. J. (1973) The use of semiconductor detectors for short nuclear half-life measurements. (PhD thesis), Kingston Polytechnic, .
Abstract
A study is made of the use of pairs of semiconductor detectors operated in coincidence for short nuclear half-life measurements. The factors affecting the energy resolution obtainable from such detectors is discussed. The pulse shapes delivered by surface barrier and lithium drifted planar detectors is considered with regard to their effect on the time resolution. The problems associated with deriving a timing signal are also discussed. A delayed coincidence system is set up and the apparatus described. The performance of a Ge(Li) - surface barrier system is investigated and the half-lives of the 59.6 keV state in Np-237 and the 86.5 keV state in Pa-233 remeasured to be (68.5 ± 0.4) ns and (37.7 ± 0.2) ns respectively. A similar investigation is also undertaken using a pair of Si(Li) beta particle detectors. The results obtained and the limitations of the present approach are critically discussed.
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